R.J.S. Bates, D.L. Rogers
ECOC 1988
High-performance interdigitated metal-semiconductor-metal detectors and photoreceivers have been fabricated using a standard refractory-gate, ion-implanted MESFET process which was also used to fabricate complex digital circuits. A rise time of 110 ps has been observed for a detector-preamplifier combination, implying a small-signal bandwidth of about 3 GHz. Detector responsivities as high as 0. 45 A/W, and dark currents as low as 5 nA have been observed.
R.J.S. Bates, D.L. Rogers
ECOC 1988
M. Yang, J. Schaub, et al.
VLSI Technology 2003
D.L. Rogers
TMPEO 1986
D.L. Rogers
ESSDERC 1991