MONOLITHIC INTEGRATION OF A 3-GHZ DETECTOR/PREAMPLIFIER USING A REFRACTORY-GATE, ION-IMPLANTED MESFET PROCESS.

Abstract

High-performance interdigitated metal-semiconductor-metal detectors and photoreceivers have been fabricated using a standard refractory-gate, ion-implanted MESFET process which was also used to fabricate complex digital circuits. A rise time of 110 ps has been observed for a detector-preamplifier combination, implying a small-signal bandwidth of about 3 GHz. Detector responsivities as high as 0. 45 A/W, and dark currents as low as 5 nA have been observed.