Nanometer resolution in luminescence microscopy of III-V heterostructures

D.L. Abraham; A. Veider; C. Schönenberger; H.P. Meier; D.J. Arent; S.F. Alvarado

doi:10.1063/1.103154

Applied Physics Letters

Paper

01 Dec 1990

Nanometer resolution in luminescence microscopy of III-V heterostructures

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Abstract

In a scanning tunneling microscope experiment, the luminescence induced by the recombination of holes with electrons tunneling into cleaved (110) GaAs/AlGaAs heterostructures is used to image the interface region with nanometer resolution.

Paper

Separation of magnetic and topographic effects in force microscopy

C. Schönenberger, S.F. Alvarado, et al.

Journal of Applied Physics

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A differential interferometer for force microscopy

C. Schönenberger, S.F. Alvarado

Review of Scientific Instruments

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Observation of single charge carriers by force microscopy

C. Schönenberger, S.F. Alvarado

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C. Schönenberger, S.F. Alvarado

Zeitschrift für Physik B Condensed Matter

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Abstract

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