Terracing and step bunching in interfaces of molecular beam epitaxy-grown (Al)GaAs multilayers
- O. Albrektsen
- H.P. Meier
- et al.
- 1993
- Applied Physics Letters
Publications
11 results for D.J. Arent
Role of substrate temperature in molecular-beam epitaxial growth of high-power GaAs/AlGaAs lasers
- S.V. Iyer
- H.P. Meier
- et al.
- 1992
- Applied Physics Letters
Indium Migration and Controlled Lateral Bandgap Variations in High-Power Strained Layer Ingaas-Algaas Lasers Grown on Nonplanar Substrates
- Luigi R. Brovelli
- Douglas J. Arent
- et al.
- 1991
- IEEE JQE
Tunneling microscopy and spectroscopy of molecular beam epitaxy grown GaAs-AlGaAs interfaces
- O. Albrektsen
- D.J. Arent
- et al.
- 1990
- Applied Physics Letters
Nanometer resolution in luminescence microscopy of III-V heterostructures
- D.L. Abraham
- A. Veider
- et al.
- 1990
- Applied Physics Letters
High-power single-mode strained single quantum well InGaAs/AlGaAs lasers grown by molecular beam epitaxy on nonplanar substrates
- D.J. Arent
- L. Brovelli
- et al.
- 1990
- Applied Physics Letters
Wavelength tuning in high power InGaAs/AlGaAs lasers grown on nonplanar substrates
- L. Brovelli
- D.J. Arent
- et al.
- 1990
- ISLC 1990
Band offsets for strained InxGa1-xAs/AlyGa1-yAs heterointerfaces
- D.J. Arent
- 1990
- Physical Review B
Indium adatom migration during molecular beam epitaxial growth of strained InGaAs/GaAs single quantum wells
- D.J. Arent
- S. Nilsson
- et al.
- 1989
- Applied Physics Letters
Ga adatom migration over a nonplanar substrate during molecular beam epitaxial growth of GaAs/AlGaAs heterostructures
- S. Nilsson
- E. Van Gieson
- et al.
- 1989
- Applied Physics Letters