Conference paper
Stress-driven segregation at a Si-Ge alloy surface
J. Tersoff, P.C. Kelires
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
A study is performed to demonstrate that nanotube (NT) junctions are ideally suited to functions as nanoscale negative differential resistance (NDR) device elements. For this purpose, two different devices are considered, a simple p-n junction and an entirely new device structure based on metal contacts to an undoped NT.
J. Tersoff, P.C. Kelires
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
J. Tersoff
Physical Review B - CMMP
B.J. Spencer, J. Tersoff
Physical Review Letters
S. Kodambaka, J. Tersoff, et al.
Physical Review Letters