Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
We cite evidence from electrical and EPR measurements on MOS capacitors as well as radiation damage experiments by other investigators to argue that anomalous positive charge (APC) in MOS devices results from an interaction of hydrogen with a trapped hole. The model is a modification of that used to explain the generation of radiation-induced interface states and envisions the production of H+ ions which drift toward the Si-SiO2 interface to form APC. © 1993.
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
K.A. Chao
Physical Review B
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
R. Ghez, M.B. Small
JES