Conference paper
Soft x-ray diffraction of striated muscle
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
We cite evidence from electrical and EPR measurements on MOS capacitors as well as radiation damage experiments by other investigators to argue that anomalous positive charge (APC) in MOS devices results from an interaction of hydrogen with a trapped hole. The model is a modification of that used to explain the generation of radiation-induced interface states and envisions the production of H+ ions which drift toward the Si-SiO2 interface to form APC. © 1993.
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics