R.W. Gammon, E. Courtens, et al.
Physical Review B
Picosecond ultrasonic techniques were used to generate and detect acoustic pulses in bonded silicon-on-insulator structures. By simulating the shapes and amplitudes of the acoustic echoes reflected from the Si-SiO2 interfaces, we can characterize the physical properties of the interfaces. We have observed that via a further thermal annealing process one can change the interface quality of a poorly bonded structure. © 1998 The Electrochemical Society, Inc.
R.W. Gammon, E. Courtens, et al.
Physical Review B
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999