Davood Shahrjerdi, Junghyo Nah, et al.
Applied Physics Letters
A thin blocking structure is incorporated in the gate-stack of heterojunction field-effect transistor (HJFET) devices to substantially suppress the gate current when the gate heterojunction is forward-biased. As a result, normally-off HJFET devices with MOSFET-like characteristics are obtained. The HJFET devices are comprised of gate, source, and drain regions formed by plasma-enhanced chemical vapor deposition on thin-film crystalline Si substrates at temperatures below 200 ̂ C. The on/off ratios larger than 106 , operation voltages as low as 1 V, and subthreshold slopes of ∼ 85 mV/decade are demonstrated. The HJFET devices can be integrated with MOSFET devices fabricated on the same crystalline Si substrates to form complementary circuits. © 2014 IEEE.
Davood Shahrjerdi, Junghyo Nah, et al.
Applied Physics Letters
Bahman Hekmatshoar, Davood Shahrjerdi, et al.
IEDM 2011
Bahman Hekmatshoar, Davood Shahrjerdi, et al.
PVSC 2012
Bahman Hekmatshoar, T.H. Ning
Electronics Letters