T.N. Jackson, S. Nelson, et al.
IEEE Transactions on Electron Devices
We have observed the fractional quantum Hall effect in the magnetotransport properties of a two-dimensional electron gas in an n-type Si/SiGe heterostructure. The effect was observed for filling factors ν=2/3 and ν=4/3 in samples whose mobilities at 1.4 K ranged from 37 000 to 85 000 cm2/V s.
T.N. Jackson, S. Nelson, et al.
IEEE Transactions on Electron Devices
S.J. Koester, K. Ismail, et al.
Semiconductor Science and Technology
E. Mendez, J.J. Nocera, et al.
Physical Review B
M. Arafa, P. Fay, et al.
IEEE Electron Device Letters