Germanium-on-insulator photodetectors
S.J. Koester, G. Dehlinger, et al.
GFP 2005
The operation of a negative differential conductance (NDC) transistor fabricated on a high-mobility Si/Si1-xGex heterostructure wafer is described. The drain characteristic of this device shows a large NDC with current peak-to-valley ratios as high as 600 (100) at T = 0.4 K (T = 1.3 K). The NDC can be modulated over a wide range of current levels by either of two separately-contacted gate electrodes. The device shows bistable switching behavior in both current- and voltage-controlled circuit configurations. The novel operating principle of this transistor is described, along with its potential for future logic and memory applications.
S.J. Koester, G. Dehlinger, et al.
GFP 2005
N.H. Karam, A. Mastrovito, et al.
Journal of Crystal Growth
D. Kern, K.Y. Lee, et al.
Japanese Journal of Applied Physics
I. Lagnado, P.R. De La Houssaye, et al.
SiRF 2000