Conference paper
Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
The optical and electrical properties of undoped HOMOCVD a-Si films are strikingly similar to those of GD films obtained over the same substrate temperature range. The contact properties studies reveled that the metals with θm ≤ 4.3 eV form a Schottky diode while those with θm ≤ 4.3 eV form a quasi- or ohmic low resistance contact to undoped HOMOCVD a-Si films without a heavily doped layer at the interface. © 1985.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures