Peter J. Price
Surface Science
The optical and electrical properties of undoped HOMOCVD a-Si films are strikingly similar to those of GD films obtained over the same substrate temperature range. The contact properties studies reveled that the metals with θm ≤ 4.3 eV form a Schottky diode while those with θm ≤ 4.3 eV form a quasi- or ohmic low resistance contact to undoped HOMOCVD a-Si films without a heavily doped layer at the interface. © 1985.
Peter J. Price
Surface Science
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
J. Tersoff
Applied Surface Science
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008