Christophe R. Tretz, C.T. Chuang, et al.
IEEE International SOI Conference 1998
This paper summarizes the status and potential of charge coupled device (CCD) memories. Cost performance tradeoffs for serial memories are reviewed, and the CCD chip organizations for slow and fast access systems are discussed. Comparisons are made between CCD and MOS random access memory (RAM) chips on the basis of cell area, support circuits, cell operation, and technology.
Christophe R. Tretz, C.T. Chuang, et al.
IEEE International SOI Conference 1998
L.M. Terman
IEEE Transactions on Magnetics
L.M. Terman
ISSCC 1978
N.C.-C. Lu, P.E. Cottrell, et al.
IEDM 1984