J. Appenzeller, J. Knoch, et al.
IEDM 2006
Array level assembly mechanisms are described for controlled nucleation of Ge quantum dots (QDs) on Si(100) surfaces templated by low dose focused ion beam pulses. The registration rates of QD positions with the target sites approach 100% for site separations of 100 nm and above, but incomplete occupancy is observed at closer distances. We investigate the dependence of the QD array perfection on the site separation, and identify the competition between the intended nucleation sites for the supply of Ge adatoms as a key factor limiting the large area registration fidelity. © 2008 American Institute of Physics.
J. Appenzeller, J. Knoch, et al.
IEDM 2006
S. Kodambaka, J. Tersoff, et al.
Physical Review Letters
S. Kodambaka, F.M. Ross, et al.
MRS Fall Meeting 2006
R.M. Tromp, M.C. Reuter
Physical Review Letters