F. Legoues, J. Tersoff, et al.
Applied Physics Letters
Displacive adsorption of As on vicinal Si(001) surfaces has in the past been attributed to reduction of step-related (extrinsic) surface stress. Here we show images of As adsorption on flat Si(001), obtained with in situ low-energy electron microscopy, and with scanning tunneling microscopy. We find displacive adsorption even on micrometer-sized terraces, on which steps play no significant role. These new results reveal the role of intrinsic surface stress as a driving force for interfacial mixing. © 1992 The American Physical Society.
F. Legoues, J. Tersoff, et al.
Applied Physics Letters
G.W. Rubloff, R.M. Tromp, et al.
JVSTA
R.M. Tromp, M.C. Reuter
Physical Review B
A.W. Denier van der Gon, R.M. Tromp, et al.
Thin Solid Films