D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
The CO/NH3 plasma chemistry operated under conventional reactive ion etching conditions does not etch NiFe or NiFeCo. However, under high density plasma conditions, etch rates up to ∼500 Å min-1 are obtained for both materials provided optimized ratios of CO and values of ion flux and ion energy are employed. The etch mechanism still has a strong physical component and appears to depend on having sufficient CO to form carbonyl etch products, and to avoid formation of a carbide-like surface layer. Under nonoptimized conditions, the latter can lead to net deposition rather than etching. © 1999 American Vacuum Society.
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
Michiel Sprik
Journal of Physics Condensed Matter
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
T.N. Morgan
Semiconductor Science and Technology