Conference paper
Non-planar device architecture for 15nm node: FinFET or trigate?
Chung-Hsun Lin, Josephine Chang, et al.
IEEE International SOI Conference 2010
We present a methodology to generate performance-aware corner models (PAMs). Accuracy is improved by emphasizing electrical variation data and reconciling the process and electrical variation data. PAM supports corner (± σ and ±2σ) simulation and Monte Carlo simulation. Furthermore, PAM supports the practice of application-specific corner cards, for example, for gain-sensitive applications. © 2009 IEEE.
Chung-Hsun Lin, Josephine Chang, et al.
IEEE International SOI Conference 2010
Sujata Paul, Frank Yeh, et al.
IEEE Electron Device Letters
Sriramkumar Venugopalan, Muhammed A. Kari, et al.
SISPAD 2012
Shu-Jen Han, Satoshi Oida, et al.
DRC 2013