Conference paper
Non-planar device architecture for 15nm node: FinFET or trigate?
Chung-Hsun Lin, Josephine Chang, et al.
IEEE International SOI Conference 2010
We present a methodology to generate performance-aware corner models (PAMs). Accuracy is improved by emphasizing electrical variation data and reconciling the process and electrical variation data. PAM supports corner (± σ and ±2σ) simulation and Monte Carlo simulation. Furthermore, PAM supports the practice of application-specific corner cards, for example, for gain-sensitive applications. © 2009 IEEE.
Chung-Hsun Lin, Josephine Chang, et al.
IEEE International SOI Conference 2010
Shu-Jen Han, Satoshi Oida, et al.
DRC 2013
Qing Cao, Shu-Jen Han, et al.
Nature Nanotechnology
Ruqiang Bao, Brian Greene, et al.
IEDM 2015