A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Thermal fluctuations of phase boundaries seperating two regions of Si surfaces near the phase transition temperature of 1135 K were analyzed by low-energy electron microscopy. The surface stress difference between the phases was found to affect the surface morphology and was estimated to be 0.06ev/(angstrom)2. The effect of elastic self-interactions at the phase boundary was integrated at the local phase boundary stiffness.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
K.A. Chao
Physical Review B
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures