M. Eizenberg, Armin Segmüller, et al.
Journal of Applied Physics
The effect of substrate temperature and As/Ga flux ratio on the incorporation of Si as a dopant in GaAs grown by molecular beam epitaxy has been studied by means of low-temperature photoluminescence (PL) measurements. It is shown that the acceptor character of Si is enhanced as the substrate temperature increases from 590 to 720v°C. The PL results suggest that the amount of Si self-compensation decreases when the atomic flux ratio increases from 2 to 6.
M. Eizenberg, Armin Segmüller, et al.
Journal of Applied Physics
R.A. Kiehl, M.A. Olson, et al.
IEDM 1988
B.B. Goldberg, T.P. Smith, et al.
Surface Science
J.M.E. Harper, M. Heiblum, et al.
Journal of Applied Physics