Y. Iye, E. Mendez, et al.
Physical Review B
The effect of substrate temperature and As/Ga flux ratio on the incorporation of Si as a dopant in GaAs grown by molecular beam epitaxy has been studied by means of low-temperature photoluminescence (PL) measurements. It is shown that the acceptor character of Si is enhanced as the substrate temperature increases from 590 to 720v°C. The PL results suggest that the amount of Si self-compensation decreases when the atomic flux ratio increases from 2 to 6.
Y. Iye, E. Mendez, et al.
Physical Review B
F. Agulla-Rueda, E. Mendez, et al.
Physical Review B
B.B. Goldberg, T.P. Smith, et al.
Surface Science
L. Esaki, L. Vina, et al.
Journal of Luminescence