Sequential single-phonon emission in GaAs-AlxGa1-xAs tunnel junctions
- T.W. Hickmott
- P. Solomon
- et al.
- 1984
- Physical Review Letters
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14 results for H. Morkoç
Valence-band discontinuity between GaN and AIN measured by x-ray photoemission spectroscopy
- G. Martin
- S. Strite
- et al.
- 1995
- Journal of Electronic Materials
Picosecond imaging of photoexcited carriers in quantum wells: Anomalous lateral confinement at high densities
- L.M. Smith
- D.R. Wake
- et al.
- 1988
- Physical Review B
Determination of the conduction-band discontinuity between in 0.53ga0.47as/in0.52al0.48as using n+-ingaas/inalas/n--ingaas capacitors
- C.K. Peng
- A. Ketterson
- et al.
- 1986
- Journal of Applied Physics
Transient capacitance study of electron traps in AlGaAs grown with As 2
- P.M. Mooney
- R. Fischer
- et al.
- 1985
- Journal of Applied Physics
Negative charge, barrier heights, and the conduction-band discontinuity in AlxGa1-xAs capacitors
- T.W. Hickmott
- P. Solomon
- et al.
- 1985
- Journal of Applied Physics
Electric field induced decrease of photoluminescence lifetime in GaAs quantum wells
- J.A. Kash
- E. Mendez
- et al.
- 1985
- Applied Physics Letters
Resonant Fowler-Nordheim tunneling in n-GaAs-undoped Al xGa1-xAs-n+GaAs capacitors
- T.W. Hickmott
- P. Solomon
- et al.
- 1984
- Applied Physics Letters
The structural dependence of light sensitivity in (Al,Ga)As/GaAs modulation doped heterostructures
- J. Klem
- T.J. Drummond
- et al.
- 1984
- Journal of Electronic Materials
Photoluminescence of Al0.4Ga0.6As/GaAs quantum well structures prepared by molecular beam epitaxy
- Y.L. Sun
- R. Fischer
- et al.
- 1984
- Thin Solid Films