David A. Selby
IBM J. Res. Dev
Photolithography using 193-nm light appears to be a viable route for the extension of optical lithography to the dimensions required for the manufacture of 1Gb DRAM and advanced CMOS microprocessors with 180-140-nm minimum feature sizes. In this paper, we discuss the origin of resist technology for 193-nm lithography and the current status of 193-nm photoresists, focusing on single-layer resist materials. We emphasize the photoresist design approaches under investigation, compare these with deep-UV (DUV) (248-nm) resist design and materials, and consider possible future lithography processes employing 193-nm lithography. Research and development on 193-nm photoresists by the lithography group at the IBM Almaden Research Center is highlighted.
David A. Selby
IBM J. Res. Dev
Maciel Zortea, Miguel Paredes, et al.
IGARSS 2021
Sabine Deligne, Ellen Eide, et al.
INTERSPEECH - Eurospeech 2001
Matthias Kaiserswerth
IEEE/ACM Transactions on Networking