W.D. Hinsberg, F.A. Houle, et al.
Journal of Physical Chemistry A
Photodesorption of SiF3 groups, which are the principal adsorbates on a silicon surface during etching by XeF2, is found to be responsible for the etch-rate enhancement observed under illumination by low-power, cw band-gap radiation. It is proposed that desorption is stimulated by photogenerated- charge-carrier mediated chemical reaction, and not the simple charge trapping and recombination mechanism usually invoked for desorption from semiconductor surfaces. © 1988 The American Physical Society.
W.D. Hinsberg, F.A. Houle, et al.
Journal of Physical Chemistry A
F.A. Houle, N. Maxim, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
G.M. Gallatin, F.A. Houle, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
F.A. Houle
Proceedings of SPIE 1989