Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The dielectric properties are reported for nanoporous thin films of poly(methyl silsesquioxane) (MSSQ) for use as an ultralow, dielectric intermetal insulator. Direct experimental conformation is provided that the films have low dielectric constants with low loss up to 10 GHz. Low-frequency measurements are also reported.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
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Digital Discovery
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Proceedings of SPIE 1989
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Physics of Fluids