R. Ghez, J.S. Lew
Journal of Crystal Growth
In this paper we wish to report on our progress in developing a positive TSI system with emphasis on what we believe is a novel approach for characterizing the silylation process. © 1992.
R. Ghez, J.S. Lew
Journal of Crystal Growth
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Small
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Surface Review and Letters
Mark W. Dowley
Solid State Communications