Methods for comparing contact hole shrinking techniques with 248 nm single layer and bilayer photoresists
- Karen Petrillo
- John Simons
- et al.
- 2002
- Microlithography 2002
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13 results for J.P. Simons
Building high-performance chemically amplified resists with polymer blends
- Qinghuang Lin
- John Simons
- et al.
- 2002
- Microlithography 2002
High resolution 248 nm bilayer resist
- Q. Lin
- K.E. Petrillo
- et al.
- 1999
- SPIE Advances in Resist Technology and Processing 1999
Extension of 248 nm optical lithography: A thin film imaging approach
- Qinghuang Lin
- Ahmad D. Katnani
- et al.
- 1998
- Microlithography 1998
Effects of underlayer on performance of bilayer resists for 248-nm lithography
- Katherina Babich
- Alessandro Callegari
- et al.
- 1998
- Microlithography 1998
Positive bilayer resists for 248- and 193-nm lithography
- Ratnam Sooriyakumaran
- Gregory M. Wallraff
- et al.
- 1998
- Microlithography 1998
0.25-μm lithography development using positive mode top surface imaging photoresist
- Douglas C. La Tulipe
- John P. Simons
- et al.
- 1994
- Microlithography 1994
Etch selectivity of 4SiMA: Hydroxystyrene based copolymers. silicon chemistry for bilayer resist systems
- G.M. Wallraff
- Carl E. Larson
- et al.
- 1998
- J. Photopolym. Sci. Tech.
Image collapse issues in photoresist
- John Simons
- Dario Goldfarb
- et al.
- 2001
- Proceedings of SPIE - The International Society for Optical Engineering
Tunable anti-reflective coatings with built-in hard mask properties facilitating thin resist processing
- Arpan P. Mahorowala
- Katherina Babich
- et al.
- 2001
- Proceedings of SPIE - The International Society for Optical Engineering