P. Asoka-Kumar, T.C. Leung, et al.
Journal of Applied Physics
Variable-energy positron annihilation depth-profiling has been applied to the study of the Si/SiO2 interface in Al-gate metal-oxide- semiconductor (MOS) structures. For both n- and p-type silicon under conditions of negative gate bias, the positron annihilation S-factor characteristic of the interface (Sint) is substantially modified. Temperature and annealing behavior, combined with known MOS physics, suggest strongly that S int depends directly on holes at interface states or traps at the Si/SiO2 interface.
P. Asoka-Kumar, T.C. Leung, et al.
Journal of Applied Physics
Z.A. Weinberg, S. Cohen
IEEE T-BME
P. Asoka-Kumar, K. O'Brien, et al.
Applied Physics Letters
A. Hartstein, Z.A. Weinberg
Journal of Physics C: Solid State Physics