D.J. DiMaria, Z.A. Weinberg, et al.
Journal of Applied Physics
Variable-energy positron annihilation depth-profiling has been applied to the study of the Si/SiO2 interface in Al-gate metal-oxide- semiconductor (MOS) structures. For both n- and p-type silicon under conditions of negative gate bias, the positron annihilation S-factor characteristic of the interface (Sint) is substantially modified. Temperature and annealing behavior, combined with known MOS physics, suggest strongly that S int depends directly on holes at interface states or traps at the Si/SiO2 interface.
D.J. DiMaria, Z.A. Weinberg, et al.
Journal of Applied Physics
T.V. Rajeevakumar, T. Lii, et al.
IEDM 1991
A. Hartstein, Z.A. Weinberg
Physical Review B
D.J. DiMaria, Z.A. Weinberg, et al.
Journal of Electronic Materials