Potential fluctuations due to P_b centres at the Si/SiO₂ interface

Abstract

We show that the potential fluctuation model of Brews applies very accurately to Pb centres at the (111) and (100) interfaces. Vacuum annealed MOS samples were used which contained a particularly 'pure' interface largely dominated by the Pb-like defects. For the (100) interface, Pb0 and Pb1 defects appear to have the same capture cross-section.