Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
We show that the potential fluctuation model of Brews applies very accurately to Pb centres at the (111) and (100) interfaces. Vacuum annealed MOS samples were used which contained a particularly 'pure' interface largely dominated by the Pb-like defects. For the (100) interface, Pb0 and Pb1 defects appear to have the same capture cross-section.
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
Imran Nasim, Melanie Weber
SCML 2024