P. Fumagalli, T.S. Plaskett, et al.
Physical Review Letters
A series of III-V-based magnetic semiconductor heterostructures, p-type (In,Mn)As/(Ga,Al)Sb, has been grown by molecular beam epitaxy. Studies on magnetotransport and magneto-optical properties show that perpendicular ferromagnetic order occurs in the heterostructures with thin (In,Mn)As layers. The origin is discussed in terms of both carrier- and strain-induced effects.
P. Fumagalli, T.S. Plaskett, et al.
Physical Review Letters
L.F. Luo, R. Beresford, et al.
Applied Physics Letters
D.N. McIlroy, D. Heskett, et al.
Physical Review B
A. Zaslavsky, T.P. Smith III, et al.
Physical Review B