D. Kazazis, S. Guha, et al.
Applied Physics Letters
Paper
Preparation of (In,Mn)As/(Ga,Al)Sb magnetic semiconductor heterostructures and their ferromagnetic characteristics
Abstract
A series of III-V-based magnetic semiconductor heterostructures, p-type (In,Mn)As/(Ga,Al)Sb, has been grown by molecular beam epitaxy. Studies on magnetotransport and magneto-optical properties show that perpendicular ferromagnetic order occurs in the heterostructures with thin (In,Mn)As layers. The origin is discussed in terms of both carrier- and strain-induced effects.
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