Negative differential resistance in ultra-thin Ge-on-insulator FETs
- D. Kazazis
- A. Zaslavsky
- et al.
- 2006
- ISTDM 2006
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14 results for A. Zaslavsky
Substrate Fermi level effects in photocatalysis on oxides: Properties of ultrathin TiO2 /Si films
- D. Kazazis
- S. Guha
- et al.
- 2009
- Applied Physics Letters
Negative differential resistance in ultrathin Ge-on-insulator FETs
- D. Kazazis
- A. Zaslavsky
- et al.
- 2006
- Semiconductor Science and Technology
Ultrathin epitaxial germanium on crystalline oxide metal-oxide- semiconductor-field-effect transistors
- E.J. Preisler
- S. Guha
- et al.
- 2005
- Applied Physics Letters
Strain relaxation in silicon-germanium microstructures observed by resonant tunneling spectroscopy
- A. Zaslavsky
- K.R. Milkove
- et al.
- 1995
- Applied Physics Letters
SiGe/Si quantum wells with abrupt interfaces grown by atmospheric pressure chemical vapor deposition
- DA Grützmacher
- TO Sedgwick
- et al.
- 1995
- Vacuum
Fabrication of three-terminal resonant tunneling devices in silicon-based material
- A. Zaslavsky
- K.R. Milkove
- et al.
- 1994
- Applied Physics Letters
Valence band Landau level mixing and anisotropy in Si1-xGex investigated by resonant magnetotunneling
- A. Zaslavsky
- D.A. Grützmacher
- et al.
- 1994
- Surface Science
Preparation of (In,Mn)As/(Ga,Al)Sb magnetic semiconductor heterostructures and their ferromagnetic characteristics
- H. Munekata
- A. Zaslavsky
- et al.
- 1993
- Applied Physics Letters
In-plane valence-band nonparabolicity and anisotropy in strained Si-Ge quantum wells
- A. Zaslavsky
- T.P. Smith III
- et al.
- 1993
- Physical Review B