M.A. Lutz, R.M. Feenstra, et al.
Surface Science
State-of-the-art resist for 193 nm lithography are analyzed with respect to possible resolution, photospeed and etch resistance. This paper describes this photoresist design study and emphasizes the many opportunities and challenges that the photoresist and semiconductor industry face with the unfolding of this technology.
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.