GaAs MESFET 16 × 16 crosspoint switch at 1700 Mbits/sec
C.J. Anderson, J.H. Magerlein, et al.
GaAs IC 1987
We have achieved solid phase epitaxy of thin amorphous Si layers on GaAs using in situ plasma processing and subsequent annealing. High-resolution transmission electron microscopy of the SiO2/Si/GaAs structure shows that a Si layer ≅20 Å thick epitaxially crystallizes on GaAs after annealing at ≅570°C in N2. Metal-oxide-semiconductor capacitors fabricated on these structures confirm the high quality of these interfaces. By comparing a high- frequency (100 kHz) capacitance-voltage curve with a quasi-static one, interface state densities as low as 4×10 12 eV-1/cm-2 were measured on both n- and p-type GaAs.
C.J. Anderson, J.H. Magerlein, et al.
GaAs IC 1987
D.A. Buchanan, E. Gusev, et al.
IEDM 2000
A. Paccagnella, A.C. Callegari, et al.
IEEE T-ED
S. Zafar, Y.-H. Kim, et al.
VLSI Technology 2006