An investigation of a nonspiking Ohmic contact to n-GaAs using the Si/Pd system
- L.C. Wang
- B. Zhang
- et al.
- 2011
- Journal of Materials Research
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11 results for E.D. Marshall
Passivation of n and p dopants in ion-implanted GaAs by a 2D+ plasma
- D.K. Sadana
- J.P. De Souza
- et al.
- 1991
- Applied Physics Letters
Properties of SiO2/Si/GaAs structures formed by solid phase epitaxy of amorphous Si on GaAs
- A.C. Callegari
- D.K. Sadana
- et al.
- 1991
- Applied Physics Letters
Nonspiking ohmic contact to p-GaAs by solid-phase regrowth
- C.C. Han
- X.Z. Wang
- et al.
- 1990
- Journal of Applied Physics
The temperature dependence of contact resistivity of the Ge/Pd and the Si/Pd nonalloyed contact scheme on n-GaAs
- L.S. Yu
- L.C. Wang
- et al.
- 1989
- Journal of Applied Physics
Planar Ge/Pd and alloyed Au-Ge-Ni ohmic contacts to n-AlxGa 1-xAs (0≤x≤0.3)
- E.D. Marshall
- L.S. Yu
- et al.
- 1989
- Applied Physics Letters
Growth and characterization of in-situ (In,Ga)As ohmic contacts to n-GaAs
- S.L. Wright
- R.F. Marks
- et al.
- 1989
- Journal of Crystal Growth
Nonalloyed ohmic contacts to n-GaAs by solid-phase epitaxy of Ge
- E.D. Marshall
- B. Zhang
- et al.
- 1987
- Journal of Applied Physics
The effect of surface preparation on the production of low interfacial charge regrown interfaces
- T.F. Kuech
- E.D. Marshall
- et al.
- 1986
- Journal of Crystal Growth
Non-alloyed ohmic contact to n-GaAs by solid phase epitaxy
- E.D. Marshall
- W.X. Chen
- et al.
- 1985
- Applied Physics Letters