Uniaxial strain relaxation on ultra-thin strained-Si directly on insulator (SSDOI) substrates

Abstract

Uniaxial strain relaxation of ultra-thin biaxial-tensile SSDOI is realized by ion-implant amorphization and solid phase epitaxy (II/SPE). The selective full amorphization in the thin SSDOI region, between raised source/drain (RSD) and channel, induces uniaxial strain relaxation in the channel. The SSDOI uniaxial strain relaxation enhances PFETs drive current by more than 20%. © 2006 IEEE.