D.S. Wen, C.C.-H. Hsu, et al.
IEDM 1989
Quantum-mechanical modeling of electron tunneling current from the quantized inversion layer of ultra-thin-oxide (<40 Å) nMOSFET's is presented, together with experimental verification. An accurate determination of the physical oxide thickness is achieved by fitting experimentally measured capacitance-versus-voltage curves to quantum-mechanically simulated capacitance-versus-voltage results. The lifetimes of quasibound states and the direct tunneling current are calculated using a transverse-resonant method. These results are used to project an oxide scaling limit of 20 Å before the chip standby power becomes excessive due to tunneling currents.
D.S. Wen, C.C.-H. Hsu, et al.
IEDM 1989
Y. Taur, C. Wann, et al.
IEDM 1998
H.-S. Wong, K.K. Chan, et al.
IEDM 1997
D.A. Buchanan, M.V. Fischetti, et al.
Applied Surface Science