Y. Taur, Y. Mii, et al.
IBM J. Res. Dev
Quantum-mechanical modeling of electron tunneling current from the quantized inversion layer of ultra-thin-oxide (<40 Å) nMOSFET's is presented, together with experimental verification. An accurate determination of the physical oxide thickness is achieved by fitting experimentally measured capacitance-versus-voltage curves to quantum-mechanically simulated capacitance-versus-voltage results. The lifetimes of quasibound states and the direct tunneling current are calculated using a transverse-resonant method. These results are used to project an oxide scaling limit of 20 Å before the chip standby power becomes excessive due to tunneling currents.
Y. Taur, Y. Mii, et al.
IBM J. Res. Dev
B. Davari, C. Koburger, et al.
IEDM 1989
Hyun J. Shin, Chih-Liang Chen, et al.
Bipolar Circuits and Technology Meeting 1989
D.A. Buchanan, J. Batey, et al.
IEEE Electron Device Letters