Quantum size effect of excitonic band-edge luminescence in strained si1-xgex/si single quantum well structures grown by gas-source si molecular beam epitaxy

Abstract

Strained SiGe/Si single quantum well structures were successfully grown by gas-source molecular beam epitaxy using disilane and germane. Quantum confined excitonic transitions of band-edge states dominated low-temperature photoluminescence (PL) spectra. The temperature dependence of PL intensity was in agreement with type-I quantum well formation. The quantum size effect was evidenced in these structures by the fact that the transition energy increased with decreasing well width. © 1992 The Japan Society of Applied Physics.