H. Ohtani, R.J. Wilson, et al.
Physical Review Letters
Scanning tunneling microscopy (STM) has been used for many atomic-scale observations of metal and semiconductor surfaces. Experience has shown that a variety of effects must be considered in interpreting high-resolution data. For example, images may be distorted by the motion of tip or surface atoms which results from tip-surface interactions at small tunnel gaps. Lower-resolution studies generally appear to be quite reliable. Empirical limits on image interpretation are discussed for some of the metal, molecule and semiconductor systems which we have measured. © 1992.
H. Ohtani, R.J. Wilson, et al.
Physical Review Letters
Chris Pearson, G.W. Anderson, et al.
Materials Science and Engineering: B
D.D. Chambliss, R.J. Wilson, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
R.J. Wilson, S. Chiang, et al.
Am. Chem. Soc., Div. Pet. Chem., Prepr.