Conference paper
Electroid-oriented adiabatic switching circuits
D.J. Frank, P. Solomon
ISLPED 1995
Periodic structure is observed in the current-voltage characteristics at 4.2 K of n-GaAs-AlxGa1-xAs-n+GaAs capacitors, grown by molecular beam epitaxy, which have AlxGa 1-xAs thicknesses of 30-35 nm. The periodicities can be explained quantitatively by the theory of resonant Fowler-Nordheim tunneling.
D.J. Frank, P. Solomon
ISLPED 1995
T.W. Hickmott
Journal of Applied Physics
D.D. Tang, P. Solomon, et al.
IEEE Electron Device Letters
H.-S. Wong, David J. Franks, et al.
IEDM 1998