On-off charge-voltage characteristics and dopant number fluctuation effects in junctionless double-gate MOSFETs
- Yuan Taur
- Han-Ping Chen
- et al.
- 2012
- IEEE T-ED
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22 results for Clement Wann
High performance 45-nm SOI technology with enhanced strain, porous low-k BEOL, and immersion lithography
- S. Narasimha
- K. Onishi
- et al.
- 2006
- IEDM 2006
Interaction of middle-of-line (MOL) temperature and mechanical stress on 90nm hi-speed device performance and reliability
- K.Y. Lim
- V. Chan
- et al.
- 2005
- ESSDERC 2005
High performance CMOS bulk technology using direct silicon bond (DSB) mixed crystal orientation substrates
- Chun-Yung Sung
- Haizhou Yin
- et al.
- 2005
- IEDM 2005
SRAM Cell Design for Stability Methodology
- Clement Wann
- Robert Wong
- et al.
- 2005
- VLSI Technology 2005
High performance and low power transistors integrated in 65nm bulk CMOS technology
- Z. Luo
- A. Steegen
- et al.
- 2004
- IEDM 2004
Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing
- H.S. Yang
- R. Malik
- et al.
- 2004
- IEDM 2004
Thermally robust dual-work function ALD-MN x MOSFETs using conventional CMOS process flow
- D.-G. Park
- Z. Luo
- et al.
- 2004
- VLSI Technology 2004
Dual work function metal gate CMOS using CVD metal electrodes
- V. Narayanan
- A.C. Callegari
- et al.
- 2004
- VLSI Technology 2004
A 90nm dual damascene hybrid (organic / inorganic) low-k - Copper BEOL integration scheme
- T. Dalton
- A. Cowley
- et al.
- 2003
- ADMETA 2003