T.O. Sedgwick
JES
Dichlorosilane and germane were used to grow silicon-germanium alloys at temperatures as low as 550°C at atmospheric pressure. The silicon-germanium alloy composition was varied over the range 15%-44%. Films containing high Ge mole fractions were grown at a temperature of 625°C and below and exhibit smooth surface morphology. Silicon-germanium/silicon multilayers with abrupt heterointerfaces have been achieved. Selective growth of silicon-germanium on oxide patterned silicon wafers was also demonstrated. A significant feature of the selective deposition is the lack of faceting at the oxide sidewall, which has been commonly observed in high-temperature silicon growth.
T.O. Sedgwick
JES
T.O. Sedgwick, J.E. Smith Jr., et al.
Journal of Crystal Growth
T.O. Sedgwick, M.E. Cowher, et al.
Journal of Electronic Materials
D.L. Harame, J.H. Comfort, et al.
VLSI Technology 1993