PaperGaAs lnjection laser with novel mode control and switching propertiesMarshall I. Nathan, J.C. Marinace, et al.Journal of Applied Physics
PaperAn improved AuGe ohmic contact to n-GaAsMarshall I. Nathan, Mordehai HeiblumSolid-State Electronics
PaperTime dependence of the reflectivity of Si at 633 and 488 nm during pulsed laser annealingMarshall I. Nathan, R.T. Hodgson, et al.Applied Physics Letters