Short-channel effect improved by lateral channel-engineering in deep-submicronmeter MOSFET's

Abstract

The normal and reverse short-channel effect of LDD MOSFET's with lateral channel-engineering (pocket or halo implant) has been investigated. An analytical model is developed which can predict Vth as a function of Leff, VDS, VBS, and pocket parameters down to 0.1-μm channel length. The new model shows that the Vth, roll-up component due to pocket implant has an exponential dependence on channel length and is determined roughly by (Np)1/4Lp. The validity of the model is verified by both experimental data and two-dimensional (2-D) numerical simulation. On the basis of the model, a methodology to optimize the minimum channel length Lmin is presented. The theoretical optimal pocket implant performance is to achieve an imin approximately 55-60% that of a uniform-channel MOSFET without pocket implant, which is a significant (over one technology generation) improvement. The process design window of pocket implant is analyzed. The design tradeoff between the improvement of short-channel immunity and the other device electrical performance is also discussed. © 1997 IEEE.