Daeik Kim, Jonghae Kim, et al.
IEEE Electron Device Letters
Device characteristics for SiGe heterojunction bipolar transistors fabricated by a simplified process without selectively implanted collector (SIC), which exhibit peak fmax of 310 GHz at the collector-current density of 7 mA/μm2 and BVcEO of 2 V, are reported. For comparison, the characteristics of devices with various SIC doses are also presented, and the observed trends are discussed. © 2006 IEEE.
Daeik Kim, Jonghae Kim, et al.
IEEE Electron Device Letters
Jae-Sung Rieh, Andreas Stricker, et al.
Proceedings of the IEEE
Sungjae Lee, Jonghae Kim, et al.
VLSI Technology 2007
Douglas M. Gill, Jonathan E. Proesel, et al.
IEEE JSTQE