Conference paper
Sige HBT performance and reliability trends through fT of 350GHz
Greg Freeman, Jae-Sung Rieh, et al.
IRPS 2003
Device characteristics for SiGe heterojunction bipolar transistors fabricated by a simplified process without selectively implanted collector (SIC), which exhibit peak fmax of 310 GHz at the collector-current density of 7 mA/μm2 and BVcEO of 2 V, are reported. For comparison, the characteristics of devices with various SIC doses are also presented, and the observed trends are discussed. © 2006 IEEE.
Greg Freeman, Jae-Sung Rieh, et al.
IRPS 2003
Wesley D. Sacher, William M. J. Green, et al.
Optics Express
Jessie C. Rosenberg, Folkert Horst, et al.
ECOC 2017
Marwan H. Khater, Thomas N. Adam, et al.
LEC 2006