R.G. Clark, R.B. Dunford, et al.
Physica B: Condensed Matter
SiGe-on-insulator material was fabricated by wafer bonding and hydrogen-induced layer transfer techniques. The transferred SiGe layer is strain relaxed and has a Ge content ranging from 15% to 25%. High-quality strained Si layers were grown on the SiGe-on-insulator substrates by the UHV/ chemical vapor deposition process at 550 °C. An electron mobility of 40 000cm2/Vs in a modulation-doped Si/SiGe heterostructure was achieved at 30 K on a SiGe-on-insulator substrate. © 2001 American Institute of Physics.
R.G. Clark, R.B. Dunford, et al.
Physica B: Condensed Matter
J. Cai, P.M. Mooney, et al.
Journal of Applied Physics
M. Arafa, P. Fay, et al.
IEEE Electron Device Letters
P.M. Mooney, K. Rim, et al.
Solid-State Electronics