L.J. Huang, K.K. Chan, et al.
IEEE International SOI Conference 2000
SiGe-on-insulator material was fabricated by wafer bonding and hydrogen-induced layer transfer techniques. The transferred SiGe layer is strain relaxed and has a Ge content ranging from 15% to 25%. High-quality strained Si layers were grown on the SiGe-on-insulator substrates by the UHV/ chemical vapor deposition process at 550 °C. An electron mobility of 40 000cm2/Vs in a modulation-doped Si/SiGe heterostructure was achieved at 30 K on a SiGe-on-insulator substrate. © 2001 American Institute of Physics.
L.J. Huang, K.K. Chan, et al.
IEEE International SOI Conference 2000
P.M. Mooney, J.O. Chu
Annual Review of Materials Science
Jakub Kedzierski, Edward Nowak, et al.
IEDM 2002
S.J. Koester, J.O. Chu, et al.
Electronics Letters