Preparation of 200 mm silicon substrates with metal ground-plane for double-gate SOI devices

Abstract

200 mm silicon substrates are fabricated using metal ground-plane for double-gate silicon-on-insulator (SOI) devices. The composite substrate using wafer technology were used in the fabrication of nanoscale double-gate SOI devices with metal gates. The compatibility of tungsten and chemical vapor deposition (CVD) silicon dioxide were discussed using the passivation of the CVD W layer and intermediate layers.