P. Gueret, U. Kaufmann, et al.
Electronics Letters
It is shown that, in a semiconductor biased in the saturation region, the combination of a field-dependent diffusion coefficient with a gradient in the steady-state electric-field distribution may lead to space-charge wave amplification. © 1969, The Institution of Electrical Engineers. All rights reserved.
P. Gueret, U. Kaufmann, et al.
Electronics Letters
R.F. Broom, P. Gueret, et al.
ISSCC 1978
P. Gueret, N. Blanc, et al.
Semiconductor Science and Technology
A.K. Geim, S.J. Bending, et al.
Applied Physics Letters