Conference paper
Model for a 15ns 16K RAM with Josephson junctions
R.F. Broom, P. Gueret, et al.
ISSCC 1978
Paper
Tunnelling Through Very Low Barriers
Abstract
Tunnelling through very low barriers made with GaAs/Ga1-xAlxAs/GaAs heterostructures is investigated. The lowest barrier has a height of 40 meV and a thickness of about 450 A. Reasonable agreement between design parameters, measured data and theoretical values is obtained. © 1985, The Institution of Electrical Engineers. All rights reserved.
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