Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
It is convenient to define the spin-torque switching efficiency in nanostructured magnetic tunnel junctions as the ratio between the free-layers thermal activation barrier height Eb and the threshold switching current Ic0. Recent device exploration has led to occasional observations of spin-torque induced magnetic switching efficiency in magnetic tunnel junctions that exceeds the macrospin limit by a factor of 2-10. In this paper we examine the possible origins for such enhancement, and materials properties that may allow the full realization of such enhancements. © 2013 American Physical Society.
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.