D. Bedau, H. Liu, et al.
Applied Physics Letters
Spin-transfer torque magnetic random access memory (STT-MRAM) is one of the most promising emerging non-volatile memory technologies. MRAM has so far been demonstrated with a unique combination of density, speed, and non-volatility in a single chip, however, without the capability to replace any single mainstream memory. In this paper, we demonstrate the basic physics of spin torque switching in 20 nm diameter magnetic tunnel junctions with perpendicular magnetic anisotropy materials. This deep scaling capability clearly indicates the STT MRAM device itself may be suitable for integration at much higher densities than previously proven. © 2012 American Institute of Physics.
D. Bedau, H. Liu, et al.
Applied Physics Letters
Guohan Hu, J. J. Nowak, et al.
VLSI-DAT 2017
Jonathan Z. Sun
Physical Review B
Solomon Assefa, J. Nowak, et al.
Journal of Applied Physics