M. Liehr, F.K. LeGoues, et al.
JVSTA
Decomposition of SiO2 films on Si(100) during ultrahigh-vacuum anneal has been shown previously to be preceded, at low anneal temperatures, by electrical defect creation in metal-oxide-semiconductor structures. In this letter, the presence of stacking faults in a Si substrate is shown to be related to enhanced oxide decomposition during high-temperature anneal. Decomposition is enhanced because of the creation of a larger number of nucleation centers for the formation of volatile SiO. These nucleation centers are the result of the metals gettered in the stacking faults close to the SiO2/Si interface.
M. Liehr, F.K. LeGoues, et al.
JVSTA
M. Liehr, S.R. Kasi
SSDM 1991
M. Liehr
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
C. Narayan, J.E. Lewis, et al.
ECS Meeting 1986