M. Liehr, C.M. Greenlief, et al.
Applied Physics Letters
Decomposition of SiO2 films on Si(100) during ultrahigh-vacuum anneal has been shown previously to be preceded, at low anneal temperatures, by electrical defect creation in metal-oxide-semiconductor structures. In this letter, the presence of stacking faults in a Si substrate is shown to be related to enhanced oxide decomposition during high-temperature anneal. Decomposition is enhanced because of the creation of a larger number of nucleation centers for the formation of volatile SiO. These nucleation centers are the result of the metals gettered in the stacking faults close to the SiO2/Si interface.
M. Liehr, C.M. Greenlief, et al.
Applied Physics Letters
F. Legoues, M. Liehr, et al.
Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
M.A. Moske, J.E. Lewis, et al.
ANTEC Annual Technical Conference 1991
C.-K. Hu, S. Chang, et al.
VMIC 1985