Conference paper
GaAs MESFET 16 × 16 crosspoint switch at 1700 Mbits/sec
C.J. Anderson, J.H. Magerlein, et al.
GaAs IC 1987
Paper
Switching and memory in ZnSe single bond sign Ge heterojunctions
Abstract
Heterojunctions of nZnSeSingle Bond signpGe switched from a high impedance to low in 100 nsec when a threshold voltage is exceeded. Resetting occurs in the opposite bias direction in 10 nsec after sufficient current is applied. Either state is maintained with all bias removed for a minimum of two weeks. © 1970 The American Institute of Physics.