Conference paper
Development of stacking faults in strained silicon layers
S.W. Bedell, A. Reznicek, et al.
IEEE International SOI Conference 2005
Paper
Switching and memory in ZnSe single bond sign Ge heterojunctions
Abstract
Heterojunctions of nZnSeSingle Bond signpGe switched from a high impedance to low in 100 nsec when a threshold voltage is exceeded. Resetting occurs in the opposite bias direction in 10 nsec after sufficient current is applied. Either state is maintained with all bias removed for a minimum of two weeks. © 1970 The American Institute of Physics.