D. Guidotti, E. Hasan, et al.
Il Nuovo Cimento D
Paper
Switching and memory in ZnSe single bond sign Ge heterojunctions
Abstract
Heterojunctions of nZnSeSingle Bond signpGe switched from a high impedance to low in 100 nsec when a threshold voltage is exceeded. Resetting occurs in the opposite bias direction in 10 nsec after sufficient current is applied. Either state is maintained with all bias removed for a minimum of two weeks. © 1970 The American Institute of Physics.
Related
H.J. Hovel
IEEE International SOI Conference 1997
A.C. Callegari, D.A. Buchanan, et al.
Applied Physics Letters
H.J. Hovel, R.T. Hodgson, et al.
IEEE T-ED