Symmetric vertical parallel plate capacitors for on-chip RF circuits in 65-nm SOI technology

Abstract

This letter presents symmetric vertical parallel plate (VPP) capacitors in 65-nm silicon-on-insulator CMOS technology. Three VPP capacitors with different metal layer options are examined with respect to effective capacitance density and Q-factor. An effective capacitance of 2.18 fF/ μm2 and a Q-factor of 23.2 at 1 GHz are obtained from a 1x + 2x (M1-M6) metal layer configuration's pre-de-embedding measurement. VPP capacitor symmetry, mismatch, leakage current density, vertical scalability, and variation characteristics from a 300-mm wafer are discussed. © 2007 IEEE.