Skip to main content
Research
Focus areas
Blog
Publications
Careers
About
Back
Focus areas
Semiconductors
Artificial Intelligence
Quantum Computing
Hybrid Cloud
Back
About
Overview
Labs
People
Back
Semiconductors
Back
Artificial Intelligence
Back
Quantum Computing
Back
Hybrid Cloud
Back
Overview
Back
Labs
Back
People
Research
Focus areas
Semiconductors
Artificial Intelligence
Quantum Computing
Hybrid Cloud
Blog
Publications
Careers
About
Overview
Labs
People
Open IBM search field
Close
Applied Physics Letters
Paper
23 Dec 2004
The field-effect interface conductance in Ge - GaAs n-n Heterojunctions
View publication
Abstract
No abstract available.
Related
Paper
Electron-beam switching of thin-film zns electroluminescent devices
Paper
Low temperature effects in Si FETs
Paper
Exciton binding energy in quantum wells
Paper
Resonant Raman scattering in a semiconductor superlattice
View all publications
